AUIRFR024NTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Drain to Source Breakdown Voltage :

55V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

71 mJ

Power Dissipation-Max :

45W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Case Connection :

DRAIN

Turn-Off Delay Time :

19 ns

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

68A

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Turn On Delay Time :

4.9 ns

Published :

2015

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Power Dissipation :

45W

Mount :

Surface Mount

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Rise Time :

34ns

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252AA

Fall Time (Typ) :

27 ns

Terminal Form :

Gull wing

Radiation Hardening :

No

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

17A

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Series :

HEXFET®

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.075Ohm