AUIRFR024NTRL

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.075Ohm

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn On Delay Time :

4.9 ns

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

55V

Power Dissipation-Max :

45W Tc

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Number of Terminations :

2

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Turn-Off Delay Time :

19 ns

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

17A

Radiation Hardening :

No

Fall Time (Typ) :

27 ns

Rise Time :

34ns

Avalanche Energy Rating (Eas) :

71 mJ

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

68A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Factory Lead Time :

16 Weeks

Published :

2015

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

45W

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE