AUIRFR024N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Length :

6.73mm

Turn On Delay Time :

4.9 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain to Source Breakdown Voltage :

55V

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

68A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

HEXFET®

Rise Time :

34ns

Turn-Off Delay Time :

19 ns

Power Dissipation-Max :

45W Tc

FET Type :

N-Channel

Element Configuration :

Single

Height :

2.39mm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Threshold Voltage :

2V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

17A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

27 ns

Drain-source On Resistance-Max :

0.075Ohm

Published :

2011

Packaging :

Tube

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Power Dissipation :

45W

JESD-609 Code :

e3

Vgs (Max) :

±20V

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V