AUIRFP4568

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

150V

Package / Case :

TO-247-3

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

763 mJ

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 103A, 10V

Drain to Source Voltage (Vdss) :

150V

Reference Standard :

AEC-Q101

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Additional Feature :

ULTRA LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

171A Tc

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

517W Tc

Transistor Application :

SWITCHING

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Resistance :

4.8mOhm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AC

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

10470pF @ 50V

Continuous Drain Current (ID) :

171A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

684A

Gate Charge (Qg) (Max) @ Vgs :

227nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Published :

2015

Mount :

Through Hole