AUIRFP4110

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

AEC-Q101

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

120A

Published :

2014

Terminal Position :

Single

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

370W Tc

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Additional Feature :

ULTRA LOW RESISTANCE

Avalanche Energy Rating (Eas) :

190 mJ

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

JEDEC-95 Code :

TO-247AC

Input Capacitance (Ciss) (Max) @ Vds :

9620pF @ 50V

Packaging :

Tube

Drain-source On Resistance-Max :

0.0045ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

670A

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Transistor Application :

SWITCHING