AUIRFP2907Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

140ns

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Package / Case :

TO-247-3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation :

310W

Number of Pins :

3

Published :

2010

Case Connection :

DRAIN

Power Dissipation-Max :

310W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Mount :

Through Hole

Height :

20.7mm

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

690 mJ

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Turn On Delay Time :

19 ns

Fall Time (Typ) :

100 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

680A

Factory Lead Time :

13 Weeks

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Width :

5.31mm

Threshold Voltage :

2V

JEDEC-95 Code :

TO-247AC

Turn-Off Delay Time :

97 ns

Packaging :

Tube

Number of Terminations :

3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

170A

Length :

15.87mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0045ohm

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 90A, 10V

Drain to Source Breakdown Voltage :

75V

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Operating Temperature :

-55°C~175°C TJ