AUIRFP064N
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- Mfr.Part #
- AUIRFP064N
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- AUIRFP064 - 55V-60V N-CHANNEL AU
- Stock
- 34,064
- In Stock ：
- 34,064
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2011
- Factory Lead Time :
- 9 Weeks
- Continuous Drain Current (ID) :
- 110A
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 200W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 43 ns
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Power Dissipation :
- 200W
- Threshold Voltage :
- 2V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Length :
- 15.87mm
- Avalanche Energy Rating (Eas) :
- 480 mJ
- Package / Case :
- TO-247-3
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.008Ohm
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-247AC
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 70 ns
- Element Configuration :
- Single
- Rise Time :
- 100ns
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 59A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 20.7mm
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 14 ns
- Drain to Source Breakdown Voltage :
- 55V
- Series :
- HEXFET®
- Width :
- 5.31mm
- Transistor Element Material :
- SILICON
- Datasheets
- AUIRFP064N
N-Channel Tube 8m Ω @ 59A, 10V ±20V 4000pF @ 25V 170nC @ 10V TO-247-3
AUIRFP064N Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 480 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4000pF @ 25V.This device conducts a continuous drain current (ID) of 110A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 43 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
AUIRFP064N Features
the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 43 ns
a threshold voltage of 2V
AUIRFP064N Applications
There are a lot of Infineon Technologies
AUIRFP064N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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