AUIRFN8458TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

19 ns

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Turn-Off Delay Time :

11 ns

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 25V

Factory Lead Time :

11 Weeks

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Mounting Type :

Surface Mount

Drain to Source Resistance :

10MOhm

Power - Max :

34W Tc

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

43A

Supplier Device Package :

PQFN (5x6)

Max Power Dissipation :

34W

Number of Channels :

2

Vgs(th) (Max) @ Id :

3.9V @ 25μA

Number of Pins :

8

Min Operating Temperature :

-55°C

FET Feature :

Standard

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Rise Time :

71ns

Max Operating Temperature :

175°C

RoHS Status :

ROHS3 Compliant

Resistance :

8mOhm

Turn On Delay Time :

9.7 ns

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

10mOhm @ 26A, 10V

Operating Temperature :

-55°C~175°C TJ