AUIRFL024NTR

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Radiation Hardening :

No

Published :

2011

Drain-source On Resistance-Max :

0.075Ohm

Drain to Source Breakdown Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.0028A

Series :

HEXFET®

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Number of Terminations :

4

Number of Pins :

4

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V

Fall Time (Typ) :

17.7 ns

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Terminal Position :

Dual

Turn On Delay Time :

8.1 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Continuous Drain Current (ID) :

2.8A

Terminal Form :

Gull wing

Factory Lead Time :

9 Weeks

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

13.4ns

Power Dissipation :

1W

Power Dissipation-Max :

1W Ta

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Turn-Off Delay Time :

22.2 ns

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.8A, 10V