AUIRFL024NTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

0.0028A

Published :

2011

JESD-609 Code :

e3

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.8A, 10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

ECCN Code :

EAR99

Turn-Off Delay Time :

22.2 ns

Gate Charge (Qg) (Max) @ Vgs :

18.3nC @ 10V

Number of Terminations :

4

Package / Case :

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Power Dissipation :

1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Factory Lead Time :

9 Weeks

Mount :

Surface Mount

Case Connection :

DRAIN

Fall Time (Typ) :

17.7 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Series :

HEXFET®

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.075Ohm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipation-Max :

1W Ta

Rise Time :

13.4ns

Continuous Drain Current (ID) :

2.8A

Number of Pins :

4

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

55V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8.1 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V