AUIRFL014NTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

9 Weeks

Vgs (Max) :

±20V

Package / Case :

TO-261-4, TO-261AA

Turn On Delay Time :

6.6 ns

Terminal Position :

Dual

Transistor Element Material :

SILICON

Radiation Hardening :

No

Published :

2009

Mounting Type :

Surface Mount

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Fall Time (Typ) :

3.3 ns

Drain Current-Max (Abs) (ID) :

2.7A

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.9A, 10V

Height :

1.8mm

Number of Terminations :

4

Drain to Source Breakdown Voltage :

55V

Power Dissipation :

1W

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rise Time :

7.1ns

Case Connection :

DRAIN

Power Dissipation-Max :

1W Ta

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Length :

6.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Width :

3.7mm

Continuous Drain Current (ID) :

1.5A

Packaging :

Tape and Reel (TR)

Threshold Voltage :

2V