AUIRFL014NTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

55V

ECCN Code :

EAR99

Published :

2009

Number of Pins :

4

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

1W Ta

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Terminal Position :

Dual

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Factory Lead Time :

9 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

2V

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.9A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Continuous Drain Current (ID) :

1.5A

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Packaging :

Tape and Reel (TR)

Rise Time :

7.1ns

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Turn On Delay Time :

6.6 ns

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

1W

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

12 ns

Width :

3.7mm

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Transistor Application :

SWITCHING

Length :

6.7mm

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

2.7A

Fall Time (Typ) :

3.3 ns

Height :

1.8mm