AUIRFL014NTR

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-261-4, TO-261AA

Radiation Hardening :

No

Threshold Voltage :

2V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

55V

Turn-Off Delay Time :

12 ns

Length :

6.7mm

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Number of Pins :

4

JESD-609 Code :

e3

Factory Lead Time :

9 Weeks

Turn On Delay Time :

6.6 ns

Number of Terminations :

4

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1W

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Transistor Element Material :

SILICON

Height :

1.8mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1W Ta

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn)

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Vgs (Max) :

±20V

Rise Time :

7.1ns

ECCN Code :

EAR99

Number of Elements :

1

Continuous Drain Current (ID) :

1.5A

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

2.7A

Width :

3.7mm

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.9A, 10V

REACH SVHC :

No SVHC

Fall Time (Typ) :

3.3 ns

Terminal Form :

Gull wing