AUIRFL014N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Series :

HEXFET®

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

15A

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Avalanche Energy Rating (Eas) :

48 mJ

Mounting Type :

Surface Mount

Published :

2014

Power Dissipation-Max :

1W Ta

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.9A, 10V

Drain Current-Max (Abs) (ID) :

1.9A

ECCN Code :

EAR99

Number of Terminations :

4

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-261-4, TO-261AA

Packaging :

Tube

Drain-source On Resistance-Max :

0.16Ohm

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G4