AUIRFB8409

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

105ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

450nC @ 10V

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 100A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Power Dissipation-Max :

375W Tc

Length :

10.67mm

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40V

Element Configuration :

Single

Threshold Voltage :

3.9V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Power Dissipation :

375W

Height :

9.02mm

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Mount :

Through Hole

Vgs (Max) :

±20V

Factory Lead Time :

16 Weeks

Package / Case :

TO-220-3

Fall Time (Typ) :

100 ns

Input Capacitance (Ciss) (Max) @ Vds :

14240pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Radiation Hardening :

No

Continuous Drain Current (ID) :

195A

Nominal Vgs :

2.2 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

32 ns

Width :

3.43mm

Turn-Off Delay Time :

160 ns

REACH SVHC :

No SVHC

Packaging :

Tube

Number of Pins :

3

Mounting Type :

Through Hole