AUIRFB8407

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Lead Free :

Lead Free

Published :

2001

Turn-Off Delay Time :

78 ns

Turn On Delay Time :

19 ns

Vgs(th) (Max) @ Id :

4V @ 150μA

Power Dissipation-Max :

230W Tc

Input Capacitance (Ciss) (Max) @ Vds :

7330pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

195A

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Power Dissipation :

230W

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Nominal Vgs :

3 V

Vgs (Max) :

±20V

Threshold Voltage :

3V

Operating Temperature :

-55°C~175°C TJ

Width :

3.43mm

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Through Hole

Number of Channels :

1

Length :

10.67mm

REACH SVHC :

No SVHC

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Height :

9.02mm

Rise Time :

70ns

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

53 ns

Packaging :

Tube

Package / Case :

TO-220-3