AUIRFB3207
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- Mfr.Part #
- AUIRFB3207
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A TO220AB
- Stock
- 8,197
- In Stock ：
- 8,197
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Length :
- 10.66mm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 68 ns
- Rise Time :
- 120ns
- Width :
- 4.82mm
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Published :
- 2010
- Packaging :
- Tube
- Power Dissipation :
- 300W
- Pulsed Drain Current-Max (IDM) :
- 720A
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-220-3
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 74 ns
- Continuous Drain Current (ID) :
- 75A
- Threshold Voltage :
- 2V
- Series :
- HEXFET®
- Turn On Delay Time :
- 29 ns
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 75A, 10V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 7600pF @ 50V
- Drain to Source Breakdown Voltage :
- 75V
- Drain-source On Resistance-Max :
- 0.0045ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Factory Lead Time :
- 11 Weeks
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 300W Tc
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Height :
- 16.51mm
- Vgs (Max) :
- ±20V
- Datasheets
- AUIRFB3207
N-Channel Tube 4.5m Ω @ 75A, 10V ±20V 7600pF @ 50V 260nC @ 10V TO-220-3
AUIRFB3207 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7600pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 75A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 68 ns.Peak drain current is 720A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 29 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
AUIRFB3207 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 720A.
a threshold voltage of 2V
AUIRFB3207 Applications
There are a lot of Infineon Technologies
AUIRFB3207 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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