AUIRFB3207
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- Mfr.Part #
- AUIRFB3207
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 75A TO220AB
- Stock
- 8,197
- In Stock ：
- 8,197
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7600pF @ 50V
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 74 ns
- Rise Time :
- 120ns
- Threshold Voltage :
- 2V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 300W
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Drain to Source Breakdown Voltage :
- 75V
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 75A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 75A, 10V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Pulsed Drain Current-Max (IDM) :
- 720A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 29 ns
- Height :
- 16.51mm
- Number of Elements :
- 1
- Power Dissipation-Max :
- 300W Tc
- JEDEC-95 Code :
- TO-220AB
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 68 ns
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.0045ohm
- Published :
- 2010
- Packaging :
- Tube
- Factory Lead Time :
- 11 Weeks
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- HEXFET®
- Length :
- 10.66mm
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Width :
- 4.82mm
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- AUIRFB3207
N-Channel Tube 4.5m Ω @ 75A, 10V ±20V 7600pF @ 50V 260nC @ 10V TO-220-3
AUIRFB3207 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7600pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 75A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 75V, and this device has a drainage-to-source breakdown voltage of 75VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 68 ns.Peak drain current is 720A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 29 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
AUIRFB3207 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 720A.
a threshold voltage of 2V
AUIRFB3207 Applications
There are a lot of Infineon Technologies
AUIRFB3207 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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