AUIRF9Z34N

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Mounting Type :

Through Hole

Width :

4.82mm

Power Dissipation-Max :

68W Tc

Vgs (Max) :

±20V

Number of Pins :

3

Transistor Element Material :

SILICON

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Pulsed Drain Current-Max (IDM) :

68A

REACH SVHC :

No SVHC

Power Dissipation :

68W

ECCN Code :

EAR99

FET Type :

P-Channel

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

9 Weeks

Threshold Voltage :

-2V

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Length :

10.66mm

Element Configuration :

Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Height :

16.51mm

Number of Elements :

1

Continuous Drain Current (ID) :

19A

Series :

Automotive, AEC-Q101, HEXFET®

Fall Time (Typ) :

41 ns

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Turn-Off Delay Time :

30 ns

Turn On Delay Time :

13 ns

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

-55V

Rise Time :

55ns