AUIRF9540N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Rise Time :

67ns

Power Dissipation-Max :

140W Tc

Rds On (Max) @ Id, Vgs :

117m Ω @ 11A, 10V

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Turn On Delay Time :

15 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

16.51mm

ECCN Code :

EAR99

Fall Time (Typ) :

51 ns

Number of Terminations :

3

FET Type :

P-Channel

Packaging :

Tube

Continuous Drain Current (ID) :

-23A

Series :

Automotive, AEC-Q101

Width :

4.82mm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Elements :

1

Mounting Type :

Through Hole

JESD-609 Code :

e3

Power Dissipation :

140W

Pulsed Drain Current-Max (IDM) :

76A

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Published :

2007

Length :

10.66mm

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

250

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Turn-Off Delay Time :

51 ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Factory Lead Time :

8 Weeks

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Threshold Voltage :

-2V

Vgs (Max) :

±20V

Terminal Position :

Single

Drain to Source Breakdown Voltage :

-100V

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V