AUIRF7805QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta

Rise Time :

20ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

16 ns

Power Dissipation :

2.5W

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

16 ns

Terminal Position :

Dual

Terminal Form :

Gull wing

Nominal Vgs :

1 V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

11m Ω @ 7A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

FET Type :

N-Channel

Published :

2011

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

26 Weeks

Number of Terminations :

8

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Continuous Drain Current (ID) :

13A

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

38 ns