AUIRF7805Q

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.011Ohm

JESD-609 Code :

e3

Power Dissipation-Max :

2.5W Ta

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30V

Number of Elements :

1

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Rds On (Max) @ Id, Vgs :

11m Ω @ 7A, 4.5V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

100A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

MS-012AA

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Published :

2011

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

13A

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Series :

HEXFET®

Surface Mount :

yes

Terminal Position :

Dual