AUIRF7799L2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

325 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

6714pF @ 25V

Power Dissipation :

125W

Continuous Drain Current (ID) :

6.6A

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.038Ohm

Fall Time (Typ) :

26.6 ns

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Drain to Source Breakdown Voltage :

250V

Number of Pins :

15

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

35A

Rds On (Max) @ Id, Vgs :

38m Ω @ 21A, 10V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Package / Case :

DirectFET™ Isometric L8

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

36.3 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

4.3W Ta 125W Tc

Published :

2015

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Position :

BOTTOM

JESD-30 Code :

R-XBCC-N9

Rise Time :

33.5ns

Number of Terminations :

9

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

73.9 ns