AUIRF7769L2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

20A

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

11560pF @ 25V

Number of Terminations :

9

Avalanche Energy Rating (Eas) :

260 mJ

Power Dissipation-Max :

3.3W Ta 125W Tc

Number of Elements :

1

Reference Standard :

AEC-Q101

Pulsed Drain Current-Max (IDM) :

500A

ECCN Code :

EAR99

JESD-30 Code :

R-XBCC-N9

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Threshold Voltage :

2.7V

Series :

HEXFET®

Factory Lead Time :

16 Weeks

Terminal Form :

NO LEAD

Vgs (Max) :

±20V

Number of Pins :

15

Package / Case :

DirectFET™ Isometric L8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Continuous Drain Current (ID) :

375A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 74A, 10V

Drain-source On Resistance-Max :

0.0035Ohm

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ

Published :

2015

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM