AUIRF7759L2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Terminations :

9

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 96A, 10V

JESD-30 Code :

R-XBCC-N9

Drain to Source Breakdown Voltage :

75V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

80 ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

18 ns

Current - Continuous Drain (Id) @ 25°C :

375A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Mounting Type :

Surface Mount

Power Dissipation :

125W

Pulsed Drain Current-Max (IDM) :

640A

Fall Time (Typ) :

300 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Published :

2015

Drain Current-Max (Abs) (ID) :

26A

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Rise Time :

37ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

257 mJ

Drain-source On Resistance-Max :

0.0023Ohm

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

REACH SVHC :

No SVHC

Package / Case :

DirectFET™ Isometric L8

Terminal Position :

BOTTOM

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3V

Transistor Element Material :

SILICON

Number of Pins :

15

Power Dissipation-Max :

3.3W Ta 125W Tc

Case Connection :

DRAIN

Lead Free :

Lead Free

Continuous Drain Current (ID) :

160A

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

12222pF @ 25V