AUIRF7739L2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rise Time :

71ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2010

Turn On Delay Time :

21 ns

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Continuous Drain Current (ID) :

270A

Input Capacitance (Ciss) (Max) @ Vds :

11880pF @ 25V

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

56 ns

Number of Pins :

3

Width :

7.1mm

Terminal Position :

BOTTOM

Length :

9.144mm

JESD-30 Code :

R-XBCC-N9

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

125W

Fall Time (Typ) :

42 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

9

Rds On (Max) @ Id, Vgs :

1m Ω @ 160A, 10V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Package / Case :

DirectFET™ Isometric L8

Power Dissipation-Max :

3.8W Ta 125W Tc

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

46A Ta 270A Tc

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

46A

Height :

558.8μm

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Series :

HEXFET®

Mounting Type :

Surface Mount

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V