AUIRF7738L2TR

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

40V

Factory Lead Time :

16 Weeks

Number of Terminations :

7

Turn-Off Delay Time :

39 ns

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

21 ns

Power Dissipation :

94W

Number of Pins :

13

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 109A, 10V

Radiation Hardening :

No

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

35A

JESD-30 Code :

R-XBCC-N7

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Published :

2010

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

538 mJ

Pulsed Drain Current-Max (IDM) :

736A

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0016Ohm

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

35A Ta 130A Tc

Continuous Drain Current (ID) :

130A

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

3.3W Ta 94W Tc

Gate Charge (Qg) (Max) @ Vgs :

194nC @ 10V

Fall Time (Typ) :

38 ns

Input Capacitance (Ciss) (Max) @ Vds :

7471pF @ 25V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Number of Elements :

1

Package / Case :

DirectFET™ Isometric L6

Rise Time :

77ns

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE