AUIRF7737L2TR
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- Mfr.Part #
- AUIRF7737L2TR
- Manufacturer
- Infineon Technologies
- Package / Case
- DirectFET™ Isometric L6
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 31A DIRECTFET
- Stock
- 3,325
- In Stock ：
- 3,325
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- DirectFET™ Isometric L6
- Power Dissipation :
- 83W
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 5469pF @ 25V
- Terminal Position :
- BOTTOM
- Continuous Drain Current (ID) :
- 31A
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Turn On Delay Time :
- 12 ns
- Lead Free :
- Lead Free
- Published :
- 2010
- Number of Pins :
- 13
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Pulsed Drain Current-Max (IDM) :
- 624A
- Gate Charge (Qg) (Max) @ Vgs :
- 134nC @ 10V
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 386 mJ
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 1.9m Ω @ 94A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 7
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 14 ns
- JESD-30 Code :
- R-XBCC-N7
- Rise Time :
- 19ns
- Drain to Source Breakdown Voltage :
- 40V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 31A Ta 156A Tc
- Turn-Off Delay Time :
- 22 ns
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 16 Weeks
- Series :
- HEXFET®
- Power Dissipation-Max :
- 3.3W Ta 83W Tc
- Datasheets
- AUIRF7737L2TR
N-Channel Tape & Reel (TR) 1.9m Ω @ 94A, 10V ±20V 5469pF @ 25V 134nC @ 10V DirectFET™ Isometric L6
AUIRF7737L2TR Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 386 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5469pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 31A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [22 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 624A.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
AUIRF7737L2TR Features
the avalanche energy rating (Eas) is 386 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 624A.
AUIRF7737L2TR Applications
There are a lot of Infineon Technologies
AUIRF7737L2TR applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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