AUIRF7737L2TR
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- Mfr.Part #
- AUIRF7737L2TR
- Manufacturer
- International Rectifier
- Package / Case
- DirectFET™ Isometric L6
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 31A/156A DIRECT
- Stock
- 3,325
- In Stock ：
- 3,325
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5469pF @ 25V
- Turn On Delay Time :
- 12 ns
- Continuous Drain Current (ID) :
- 31A
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-XBCC-N7
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Additional Feature :
- High Reliability
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 3.3W Ta 83W Tc
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 22 ns
- Avalanche Energy Rating (Eas) :
- 386 mJ
- ECCN Code :
- EAR99
- Factory Lead Time :
- 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 31A Ta 156A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Series :
- HEXFET®
- Power Dissipation :
- 83W
- Rise Time :
- 19ns
- Rds On (Max) @ Id, Vgs :
- 1.9m Ω @ 94A, 10V
- Number of Elements :
- 1
- Package / Case :
- DirectFET™ Isometric L6
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Number of Pins :
- 13
- Fall Time (Typ) :
- 14 ns
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 7
- Drain to Source Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Published :
- 2010
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 134nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 624A
- Datasheets
- AUIRF7737L2TR
N-Channel Tape & Reel (TR) 1.9m Ω @ 94A, 10V ±20V 5469pF @ 25V 134nC @ 10V DirectFET™ Isometric L6
AUIRF7737L2TR Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 386 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5469pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 31A amps.In this device, the drain-source breakdown voltage is 40V and VGS=40V, so the drain-source breakdown voltage is 40V in this case.It is [22 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 624A.A turn-on delay time of 12 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
AUIRF7737L2TR Features
the avalanche energy rating (Eas) is 386 mJ
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 22 ns
based on its rated peak drain current 624A.
AUIRF7737L2TR Applications
There are a lot of Infineon Technologies
AUIRF7737L2TR applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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