AUIRF7736M2TR

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Mfr.Part #
AUIRF7736M2TR
Manufacturer
Infineon Technologies
Package / Case
DirectFET™ Isometric M4
Datasheet
Download
Description
MOSFET N-CH 40V 22A DIRECTFET
Stock
20,053
In Stock :
20,053

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~175°C TJ
Factory Lead Time :
16 Weeks
Number of Terminations :
5
Rise Time :
43ns
Input Capacitance (Ciss) (Max) @ Vds :
4267pF @ 25V
Mounting Type :
Surface Mount
JESD-30 Code :
R-XBCC-N5
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs(th) (Max) @ Id :
4V @ 150μA
Power Dissipation-Max :
2.5W Ta 63W Tc
Number of Pins :
9
Series :
HEXFET®
Transistor Element Material :
SILICON
JESD-609 Code :
e1
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
40V
Avalanche Energy Rating (Eas) :
286 mJ
Power Dissipation :
63W
Threshold Voltage :
3V
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
3m Ω @ 65A, 10V
Mount :
Surface Mount
Number of Elements :
1
Turn On Delay Time :
21 ns
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
39 ns
Terminal Position :
BOTTOM
Fall Time (Typ) :
27 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
REACH SVHC :
No SVHC
Pulsed Drain Current-Max (IDM) :
432A
Continuous Drain Current (ID) :
22A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
22A Ta 108A Tc
Case Connection :
DRAIN
Package / Case :
DirectFET™ Isometric M4
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
108nC @ 10V
Drain-source On Resistance-Max :
0.003Ohm
Published :
2010
Additional Feature :
High Reliability
Datasheets
AUIRF7736M2TR
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies AUIRF7736M2TR from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:5, Mounting Type:Surface Mount, Number of Pins:9, Package / Case:DirectFET™ Isometric M4, AUIRF7736M2TR pinout, AUIRF7736M2TR datasheet PDF, AUIRF7736M2TR amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies AUIRF7736M2TR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies AUIRF7736M2TR


N-Channel Tape & Reel (TR) 3m Ω @ 65A, 10V ±20V 4267pF @ 25V 108nC @ 10V DirectFET™ Isometric M4

AUIRF7736M2TR Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 286 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4267pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 39 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 432A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 21 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

AUIRF7736M2TR Features


the avalanche energy rating (Eas) is 286 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 39 ns
based on its rated peak drain current 432A.
a threshold voltage of 3V


AUIRF7736M2TR Applications


There are a lot of Infineon Technologies
AUIRF7736M2TR applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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