AUIRF7734M2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

2545pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Turn On Delay Time :

13 ns

Power Dissipation :

2.5W

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

288A

Current - Continuous Drain (Id) @ 25°C :

17A Ta

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-XBCC-N3

Turn-Off Delay Time :

42 ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

17A

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 100µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Elements :

1

Number of Pins :

7

Drain-source On Resistance-Max :

0.0049Ohm

Reference Standard :

AEC-Q101

Published :

2011

Drain to Source Breakdown Voltage :

40V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Rise Time :

49ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

56 mJ

Radiation Hardening :

No

FET Type :

N-Channel

Package / Case :

DirectFET™ Isometric M2

Power Dissipation-Max :

2.5W Ta 46W Tc

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 43A, 10V

Fall Time (Typ) :

45 ns