AUIRF7669L2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Fall Time (Typ) :

14 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

375A

Drain-source On Resistance-Max :

0.0044Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Number of Terminations :

9

Number of Pins :

15

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

460A

Additional Feature :

High Reliability

Power Dissipation :

100W

Current - Continuous Drain (Id) @ 25°C :

19A Ta 114A Tc

Number of Elements :

1

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

850 mJ

Turn-Off Delay Time :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

JESD-609 Code :

e3

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Rise Time :

30ns

Turn On Delay Time :

15 ns

Published :

2011

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 68A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5660pF @ 25V

JESD-30 Code :

R-XBCC-N9

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Radiation Hardening :

No

Package / Case :

DirectFET™ Isometric L8

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

3.3W Ta 100W Tc

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

114A