AUIRF7665S2TR

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Radiation Hardening :

No

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 25μA

Power Dissipation :

2.4W

Mounting Type :

Surface Mount

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Drain-source On Resistance-Max :

0.062Ohm

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta 14.4A Tc

Power Dissipation-Max :

2.4W Ta 30W Tc

Mount :

Surface Mount

Transistor Application :

AMPLIFIER

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Width :

3.95mm

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

7.1 ns

Pulsed Drain Current-Max (IDM) :

58A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

77A

Rise Time :

6.4ns

Number of Pins :

3

Vgs (Max) :

±20V

Number of Terminations :

2

Height :

558.8μm

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

515pF @ 25V

JESD-30 Code :

R-XBCC-N2

Turn On Delay Time :

3.8 ns

Continuous Drain Current (ID) :

14.4A

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

3.6 ns

Published :

2010

Rds On (Max) @ Id, Vgs :

62m Ω @ 8.9A, 10V

Package / Case :

DirectFET™ Isometric SB

Length :

4.826mm

Terminal Position :

BOTTOM

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE