AUIRF7640S2TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.4W Ta 30W Tc

Number of Pins :

6

Turn-Off Delay Time :

6.3 ns

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Turn On Delay Time :

4 ns

JESD-30 Code :

R-XBCC-N2

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Fall Time (Typ) :

6.2 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Published :

2010

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Number of Terminations :

2

Rise Time :

12ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

36m Ω @ 13A, 10V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

5.8A Ta 21A Tc

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

77A

Power Dissipation :

30W

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

84A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Package / Case :

DirectFET™ Isometric SB

Number of Elements :

1

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Avalanche Energy Rating (Eas) :

57 mJ

Vgs(th) (Max) @ Id :

5V @ 25μA

Continuous Drain Current (ID) :

5.8A