AUIRF7478QTR
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- Mfr.Part #
- AUIRF7478QTR
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7A 8SO
- Stock
- 33,095
- In Stock ：
- 33,095
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Series :
- HEXFET®
- Turn-Off Delay Time :
- 44 ns
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 4.2A, 10V
- Radiation Hardening :
- No
- Power Dissipation :
- 2.5W
- Resistance :
- 26mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Turn On Delay Time :
- 7.7 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 4.5V
- Continuous Drain Current (ID) :
- 7A
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2012
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Height :
- 1.5mm
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 2.5W Ta
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Drain to Source Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Rise Time :
- 2.6ns
- Factory Lead Time :
- 26 Weeks
- Fall Time (Typ) :
- 13 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1740pF @ 25V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain Current-Max (Abs) (ID) :
- 7A
- Number of Pins :
- 8
- Width :
- 4mm
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Length :
- 5mm
- Datasheets
- AUIRF7478QTR
N-Channel Tape & Reel (TR) 26m Ω @ 4.2A, 10V ±20V 1740pF @ 25V 31nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
AUIRF7478QTR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1740pF @ 25V.This device conducts a continuous drain current (ID) of 7A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 7A.When the device is turned off, a turn-off delay time of 44 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7.7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
AUIRF7478QTR Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 44 ns
AUIRF7478QTR Applications
There are a lot of Infineon Technologies
AUIRF7478QTR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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