AUIRF7207QTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Terminal Form :

Gull wing

Length :

5mm

Vgs (Max) :

±12V

Turn-Off Delay Time :

43 ns

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4mm

Drain to Source Breakdown Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Rds On (Max) @ Id, Vgs :

60m Ω @ 5.4A, 4.5V

Factory Lead Time :

26 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

2.5W

Rise Time :

24ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Terminations :

8

Transistor Application :

SWITCHING

Fall Time (Typ) :

41 ns

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Threshold Voltage :

-700mV

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

43A

Height :

1.5mm

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

5.4A Ta

Gate to Source Voltage (Vgs) :

12V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Published :

2011

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Turn On Delay Time :

11 ns

FET Type :

P-Channel

Power Dissipation-Max :

2.5W Ta

REACH SVHC :

No SVHC

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

5.4A

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.06Ohm

Operating Temperature :

-55°C~150°C TJ