AUIRF6218STRL
- Mfr.Part #
- AUIRF6218STRL
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- AUTOMOTIVE HEXFET P CHANNEL
- Stock
- 22,476
- In Stock :
- 22,476
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 150V
- Transistor Application :
- SWITCHING
- Series :
- HEXFET®
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Reference Standard :
- AEC-Q101
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- FET Type :
- P-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Voltage (Vdss) :
- 150V
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Surface Mount :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 16A, 10V
- Avalanche Energy Rating (Eas) :
- 210 mJ
- Published :
- 2015
- Drain Current-Max (Abs) (ID) :
- 27A
- Reach Compliance Code :
- Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2210pF @ 25V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 250W Tc
- Drain-source On Resistance-Max :
- 0.15Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 110A
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 9 Weeks
- Datasheets
- AUIRF6218STRL

P-Channel Tape & Reel (TR) 150m Ω @ 16A, 10V ±20V 2210pF @ 25V 110nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF6218STRL Description
AUIRF6218STRL is a type of HEXFET? power MOSFET developed by Infineon Technologies for low on-resistance per silicon area utilizing the latest processing techniques. Fast switching speed and ruggedized device design can also be delivered. These features enable this device to be well suited for automotive and other applications.
AUIRF6218STRL Features
-
Low on-resistance per silicon area
-
Latest processing techniques
-
Fast switching speed
-
Ruggedized device design
-
Available in the D2Pak package
AUIRF6218STRL Applications
-
Automotive applications
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