AUIRF6218STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Published :

2015

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

150V

Avalanche Energy Rating (Eas) :

210 mJ

Drain Current-Max (Abs) (ID) :

27A

Reference Standard :

AEC-Q101

Series :

HEXFET®

Drain-source On Resistance-Max :

0.15Ohm

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

9 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

250W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

110A

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

DS Breakdown Voltage-Min :

150V

Number of Elements :

1

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON