AUIRF6218S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Turn-Off Delay Time :

35 ns

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

Number of Terminations :

2

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

30 ns

Continuous Drain Current (ID) :

27A

Terminal Position :

Single

Published :

2015

Power Dissipation :

250W

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

150V

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

27A Tc

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-150V

Number of Pins :

3

Number of Elements :

1

Rise Time :

70ns

Case Connection :

DRAIN

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

250W Tc

Transistor Element Material :

SILICON

Turn On Delay Time :

21 ns