AUIRF6218S

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

21 ns

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

ECCN Code :

EAR99

Power Dissipation :

250W

Power Dissipation-Max :

250W Tc

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Rise Time :

70ns

Radiation Hardening :

No

Turn-Off Delay Time :

35 ns

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Mount :

Surface Mount

Transistor Application :

SWITCHING

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-150V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

Published :

2015

Series :

HEXFET®

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

30 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

27A

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Drain to Source Voltage (Vdss) :

150V

Configuration :

SINGLE WITH BUILT-IN DIODE