AUIRF6215STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Terminal Position :

Single

Published :

2015

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Power Dissipation :

3.8W

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

150V

Drain-source On Resistance-Max :

0.29Ohm

Turn On Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Terminal Form :

Gull wing

Power Dissipation-Max :

3.8W Ta 110W Tc

Rise Time :

36ns

Number of Terminations :

2

Radiation Hardening :

No

Continuous Drain Current (ID) :

13A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

53 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Pulsed Drain Current-Max (IDM) :

44A

Fall Time (Typ) :

37 ns

Number of Pins :

3

Drain to Source Breakdown Voltage :

-150V