AUIRF6215S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

150V

Terminal Position :

Single

Power Dissipation :

3.8W

Number of Pins :

3

Rise Time :

36ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

44A

Drain-source On Resistance-Max :

0.29Ohm

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.8W Ta 110W Tc

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

-150V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

13A

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Turn On Delay Time :

14 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Published :

2015

Factory Lead Time :

16 Weeks

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Series :

HEXFET®

Turn-Off Delay Time :

53 ns

Number of Terminations :

2

Lead Free :

Lead Free

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

37 ns

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No