AUIRF6215

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

53 ns

Fall Time (Typ) :

37 ns

Turn On Delay Time :

14 ns

Packaging :

Tube

Rise Time :

36ns

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Length :

10.66mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

44A

Package / Case :

TO-220-3

Mount :

Through Hole

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.29Ohm

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

13A

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Additional Feature :

AVALANCHE RATED

Number of Terminations :

3

Width :

4.82mm

Power Dissipation :

110W

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

150V

Height :

16.51mm

Radiation Hardening :

No

Published :

2006

Drain to Source Breakdown Voltage :

-150V

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Threshold Voltage :

-2V

Case Connection :

DRAIN

Power Dissipation-Max :

110W Tc

REACH SVHC :

No SVHC