AUIRF6215

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.66mm

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

ECCN Code :

EAR99

Power Dissipation-Max :

110W Tc

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

14 ns

Threshold Voltage :

-2V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Drain to Source Voltage (Vdss) :

150V

Number of Pins :

3

Mount :

Through Hole

Fall Time (Typ) :

37 ns

Turn-Off Delay Time :

53 ns

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Width :

4.82mm

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Rise Time :

36ns

Radiation Hardening :

No

Height :

16.51mm

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-220-3

Published :

2006

Continuous Drain Current (ID) :

13A

Drain-source On Resistance-Max :

0.29Ohm

Series :

HEXFET®

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

FET Type :

P-Channel

Power Dissipation :

110W

Drain to Source Breakdown Voltage :

-150V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

44A

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

REACH SVHC :

No SVHC