AUIRF540Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

92W Tc

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Operating Temperature :

-55°C~175°C TJ

Rise Time :

51ns

Mounting Type :

Through Hole

Number of Terminations :

3

Nominal Vgs :

2 V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

92W

Length :

10.66mm

FET Type :

N-Channel

REACH SVHC :

No SVHC

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

36A

Number of Pins :

3

Threshold Voltage :

2V

Mount :

Through Hole

Height :

16.51mm

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Series :

HEXFET®

Drain-source On Resistance-Max :

0.0265Ohm

Element Configuration :

Single

Turn On Delay Time :

15 ns

Package / Case :

TO-220-3

ECCN Code :

EAR99

Turn-Off Delay Time :

43 ns

Packaging :

Tube

Number of Elements :

1

Transistor Application :

SWITCHING

Fall Time (Typ) :

39 ns

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Width :

4.82mm

Drain to Source Breakdown Voltage :

100V

Published :

2000

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 22A, 10V