AUIRF5210STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2780pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

14 ns

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

72 ns

Drain to Source Resistance :

60mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

60mOhm @ 38A, 10V

Fall Time (Typ) :

55 ns

Supplier Device Package :

D2PAK

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Radiation Hardening :

No

Input Capacitance :

2.78nF

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Rise Time :

63ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

3.1W

Min Operating Temperature :

-55°C

Published :

2015

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Rds On Max :

60 mΩ

Lead Free :

Lead Free

Series :

HEXFET®

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

38A

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

100V

Drain to Source Breakdown Voltage :

-100V

Power Dissipation-Max :

3.1W Ta 170W Tc