AUIRF4905STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

42A

Element Configuration :

Single

Fall Time (Typ) :

64 ns

Current - Continuous Drain (Id) @ 25°C :

42A Tc

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

20m Ω @ 42A, 10V

ECCN Code :

EAR99

Power Dissipation-Max :

200W Tc

Number of Channels :

1

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

20 ns

Power Dissipation :

17W

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Rise Time :

99ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

Automotive, AEC-Q101, HEXFET®

Lead Free :

Lead Free

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-55V

Pulsed Drain Current-Max (IDM) :

280A

Number of Elements :

1

Transistor Application :

SWITCHING

Number of Pins :

3

Transistor Element Material :

SILICON

Published :

2010

Turn-Off Delay Time :

51 ns

Drain to Source Voltage (Vdss) :

55V

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.02Ohm

Contact Plating :

Tin