AUIRF4905S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

20m Ω @ 42A, 10V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

42A

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Reference Standard :

AEC-Q101

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Series :

HEXFET®

Avalanche Energy Rating (Eas) :

140 mJ

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Drain-source On Resistance-Max :

0.02Ohm

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

280A

Number of Elements :

1

Published :

1997

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Power Dissipation-Max :

200W Tc

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

16 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA