AUIRF4905L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.67mm

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

55V

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2012

Drain to Source Breakdown Voltage :

-55V

Transistor Application :

SWITCHING

Package / Case :

TO-262

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Power Dissipation :

25W

Turn On Delay Time :

20 ns

Vgs (Max) :

±20V

Width :

4.83mm

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

280A

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Element Configuration :

Single

Packaging :

Tube

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

20m Ω @ 42A, 10V

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.02Ohm

Power Dissipation-Max :

200W Tc

Current - Continuous Drain (Id) @ 25°C :

42A Tc

FET Type :

P-Channel

Mount :

Through Hole

Height :

9.65mm

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

51 ns

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

9 Weeks

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Continuous Drain Current (ID) :

42A