AUIRF4905

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

20m Ω @ 38A, 10V

Pulsed Drain Current-Max (IDM) :

260A

FET Type :

P-Channel

Series :

HEXFET®

Number of Elements :

1

Published :

2006

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

200W Tc

ECCN Code :

EAR99

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.02Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Threshold Voltage :

-2V

Width :

4.82mm

Mount :

Through Hole

Element Configuration :

Single

Continuous Drain Current (ID) :

74A

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

96 ns

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

16.51mm

Power Dissipation :

200W

Turn-Off Delay Time :

61 ns

Number of Pins :

3

Length :

10.66mm

Contact Plating :

Tin

Packaging :

Tube

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Turn On Delay Time :

18 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

55V

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

-55V

Transistor Element Material :

SILICON

Rise Time :

99ns

Transistor Application :

SWITCHING